Kingston Technology ValueRAM memory module 8 GB 1 x 8 GB DDR4

SKU
KVR32N22S8/8
£28.19 £23.49
In stock
8GB, DDR4, 3200MHz, Non-ECC, CL22, 1.2V, 288-pin, JEDEC
  • Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
  • Low-power auto self refresh (LPASR)
  • Data bus inversion (DBI) for data bus
  • On-die VREFDQ generation and calibration
  • Single-rank
  • On-board I2 serial presence-detect (SPD) EEPROM
  • 16 internal banks; 4 groups of 4 banks each
  • Fixed burst chop (BC) of 4 and burst length (BL) of 8 via the mode register set (MRS)
  • Selectable BC4 or BL8 on-the-fly (OTF)
  • Fly-by topology
  • Terminated control command and address bus
  • RoHS Compliant and Halogen-Free
More Information
Internal memory type DDR4
Memory clock speed 3200 MHz
ECC No
Memory form factor 288-pin DIMM
SKU KVR32N22S8/8
EAN 0740617296068
Manufacturer Kingston Technology
Availability Out of Stock
Product Family ValueRAM
PDF URLs View PDF
ValueRAM's KVR32N22S8/8 is a 1G x 64-bit (8GB) DDR4-3200 CL22 SDRAM (Synchronous DRAM), 1Rx8, memory module, based on eight 1G x 8-bit FBGA components. The SPD is programmed to JEDEC standard latency DDR4-3200 timing of 22-22-22 at 1.2V. Each 288-pin DIMM uses gold contact fingers.
Power
Memory voltage1.2 V
Design
JEDEC standardYes
Technical details
Country of originTaiwan
Doesn't containHalogen
Compliance certificatesRoHS
Memory
Buffered memory typeUnregistered (unbuffered)
Memory layout (modules x size)1 x 8 GB
Internal memory8 GB
Component forPC/Server
Memory form factor288-pin DIMM
CAS latency22
Memory voltage1.2 V
Lead platingGold
Module configuration1024M x 64
Row cycle time45.75 ns
Refresh row cycle time350 ns
Row active time32 ns
Memory ranking1
ECCNo
Internal memory typeDDR4
Programming power voltage (VPP)2.5 V
Features
Buffered memory typeUnregistered (unbuffered)
Memory layout (modules x size)1 x 8 GB
Internal memory8 GB
Component forPC/Server
Memory form factor288-pin DIMM
CAS latency22
Memory voltage1.2 V
Lead platingGold
Module configuration1024M x 64
Row cycle time45.75 ns
Refresh row cycle time350 ns
Row active time32 ns
Country of originTaiwan
Memory ranking1
ECCNo
Internal memory typeDDR4
Programming power voltage (VPP)2.5 V
JEDEC standardYes
Harmonized System (HS) code84733020
Operational conditions
Operating temperature (T-T)0 - 85 °C
Storage temperature (T-T)-55 - 100 °C
Sustainability
Doesn't containHalogen
Weight & dimensions
Width133.3 mm
Height31.2 mm
Logistics data
Harmonized System (HS) code84733020
Other features
Country of originTaiwan
Harmonized System (HS) code84733020
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